A new equivalent circuit model of IGBT for simulation of current sensors

Author

Kao, Chia-Hsiung ; Tseng, Chun-Chieh ; Lee, Fong-Ming ; Shen, Z. John

Author_Institution

Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan

Volume

20

Issue

4

fYear

2005

fDate

7/1/2005 12:00:00 AM

Firstpage

725

Lastpage

731

Abstract

A new equivalent circuit model for insulated gate bipolar transistor is presented. It takes into account both electron and hole conduction in sensors and is incorporated with SPICE3 for the simulation of three types of current sensors, namely active, bipolar, and MOS sensors. It adopts a multiMOS model to include the doping variation in the MOS body. The results agree well with the current sensing measurements within an average error of 4.4%.

Keywords

MIS devices; SPICE; doping profiles; electric current measurement; electric sensing devices; equivalent circuits; insulated gate bipolar transistors; power MOSFET; power bipolar transistors; semiconductor device models; IGBT; SPICE3; current sensing measurements; current sensors; doping variation; equivalent circuit model; insulated gate bipolar transistor; multiMOS model; Charge carrier processes; Circuit simulation; Current measurement; Equivalent circuits; Insulated gate bipolar transistors; MOSFET circuits; Radiative recombination; Semiconductor process modeling; Spontaneous emission; Threshold voltage; Power semiconductor devices; sensors;

fLanguage

English

Journal_Title

Power Electronics, IEEE Transactions on

Publisher

ieee

ISSN

0885-8993

Type

jour

DOI

10.1109/TPEL.2005.850909

Filename

1461453