Title :
A new equivalent circuit model of IGBT for simulation of current sensors
Author :
Kao, Chia-Hsiung ; Tseng, Chun-Chieh ; Lee, Fong-Ming ; Shen, Z. John
Author_Institution :
Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
fDate :
7/1/2005 12:00:00 AM
Abstract :
A new equivalent circuit model for insulated gate bipolar transistor is presented. It takes into account both electron and hole conduction in sensors and is incorporated with SPICE3 for the simulation of three types of current sensors, namely active, bipolar, and MOS sensors. It adopts a multiMOS model to include the doping variation in the MOS body. The results agree well with the current sensing measurements within an average error of 4.4%.
Keywords :
MIS devices; SPICE; doping profiles; electric current measurement; electric sensing devices; equivalent circuits; insulated gate bipolar transistors; power MOSFET; power bipolar transistors; semiconductor device models; IGBT; SPICE3; current sensing measurements; current sensors; doping variation; equivalent circuit model; insulated gate bipolar transistor; multiMOS model; Charge carrier processes; Circuit simulation; Current measurement; Equivalent circuits; Insulated gate bipolar transistors; MOSFET circuits; Radiative recombination; Semiconductor process modeling; Spontaneous emission; Threshold voltage; Power semiconductor devices; sensors;
Journal_Title :
Power Electronics, IEEE Transactions on
DOI :
10.1109/TPEL.2005.850909
