DocumentCode :
991401
Title :
Erratum for "A Physics-Based Analytic Solution to the MOSFET Surface Potential From Accumulation to Strong-Inversion Region"
Author :
Jin He
Volume :
54
Issue :
2
fYear :
2007
Firstpage :
372
Lastpage :
372
Abstract :
The author makes the following corrections to the original article (see ibid., vol.53, no.9, p.2008-16, Sept. 2006). Due to miscommunication, the author has included Mansun Chan, Xing Zhang, and Yangyuan Wang as coauthors without their full consent. Jin He should be the sole author of the paper and is responsible for all the contents. He apologizes to the other coauthors whose names should not be associated with the paper.
Keywords :
MOSFET; semiconductor device models; surface potential; MOSFET; accumulation region; physics-based analytic solution; strong-inversion region; surface potential;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2006.890468
Filename :
4067186
Link To Document :
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