Title :
High-Temperature Stable IrxSi Gates With High Work Function on HfSiON p-MOSFETs
Author :
Hung, B.F. ; Wu, C.H. ; Chin, Albert ; Wang, S.J. ; Yen, F.Y. ; Hou, Y.T. ; Jin, Y. ; Tao, H.J. ; Chen, Shih C. ; Liang, Mong-Song
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu
Abstract :
A novel 1000 degC-stable IrxSi gate on HfSiON is shown for the first time with full process compatibility to current very-large-scale-integration fabrication lines and proper effective work function of 4.95 eV at 1.6-nm equivalent-oxide thickness. In addition, small threshold voltages and good hole mobilities are measured in IrxSi/HfSiON transistors. The 1000 degC thermal stability above pure metal (900 degC only) is due to the inserted 5-nm amorphous Si, which also gives less Fermi-level pinning by the accumulated metallic full silicidation at the interface
Keywords :
hafnium compounds; high-temperature electronics; hole mobility; iridium compounds; power MOSFET; silicon compounds; work function; 1.6 nm; 1000 C; 4.95 eV; 5 nm; 900 C; IrSi-HfSiON; high work function; high-temperature stable gates; metallic full silicidation; p-MOSFET; thermal stability; very-large-scale-integration fabrication lines; Amorphous materials; Dielectrics; Etching; Fabrication; MOSFET circuits; Rapid thermal processing; Silicidation; Thermal stability; Threshold voltage; Very large scale integration; $hbox{Ir}_{x}hbox{Si}$; Full silicidation (FUSI); HfSiON;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2006.888626
