• DocumentCode
    991505
  • Title

    Erratum: Processing of InP MIS devices monitored via photoluminescence measurements

  • Author

    Krawczyk, S. ; Bailly, B. ; Sautreuil, Bernard ; Blanchet, R. ; Viktorovitch, P.

  • Volume
    20
  • Issue
    8
  • fYear
    1984
  • Firstpage
    356
  • Keywords
    III-V semiconductors; indium compounds; insulated gate field effect transistors; monitoring; photoluminescence; semiconductor device manufacture; III-V semiconductor; InP MIS devices; MIS devices; MISFET; fabrication; n-type InP; photoluminescence measurements; production monitoring; surface state density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840243
  • Filename
    4248680