DocumentCode
991505
Title
Erratum: Processing of InP MIS devices monitored via photoluminescence measurements
Author
Krawczyk, S. ; Bailly, B. ; Sautreuil, Bernard ; Blanchet, R. ; Viktorovitch, P.
Volume
20
Issue
8
fYear
1984
Firstpage
356
Keywords
III-V semiconductors; indium compounds; insulated gate field effect transistors; monitoring; photoluminescence; semiconductor device manufacture; III-V semiconductor; InP MIS devices; MIS devices; MISFET; fabrication; n-type InP; photoluminescence measurements; production monitoring; surface state density;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19840243
Filename
4248680
Link To Document