Title :
Radiative and nonradiative lifetimes in n-type and p-type 1.6 μm InGaAs
Author :
Henry, C.H. ; Logan, R.A. ; Merritt, F.R. ; Bethea, C.G.
Author_Institution :
AT&T Bell Laboratories, Murray Hill, USA
Abstract :
Radiative and nonradiative lifetimes were deduced from measurements of lifetime and efficiency in 1.6 μm InGaAs double-heterostructure active layers. The nonradiative rate is interpreted as due to the Auger effect. We find that the dominant Auger rate involves holes. This Auger rate increases with wavelength, accounting for the decrease in the temperature coefficient T0 with wavelength in InGaAsP material.
Keywords :
Auger effect; III-V semiconductors; carrier lifetime; gallium arsenide; indium compounds; minority carriers; 1.6 micron wavelength; Auger effect; Auger rate; III-V semiconductors; InGaAs double-heterostructure active layers; nonradiative lifetimes; radiative lifetimes; temperature coefficient;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840245
