Title :
InAsxP1-x/InP photodiodes prepared by molecular-beam epitaxy
Author :
Lee, T.P. ; Burrus, C.A. ; Sessa, W.B. ; Tsang, W.T.
Author_Institution :
AT&T Bell Laboratories, Crawford Hill Laboratory, Holmdel, USA
Abstract :
Photodiodes have been made in epitaxial layers of InAsxP1-x grown by molecular-beam epitaxy on InP substrates The As-P ratio of this material system can be adjusted to produce photodetectors for the 2-3 μm-wavelength region. Initial devices exhibit cutoff wavelengths as long as 2 μm.
Keywords :
III-V semiconductors; indium compounds; photodetectors; photodiodes; semiconductor epitaxial layers; 2 microns to 3 microns wavelength; As-P ratio; III-V semiconductors; InAsxP1-x/InP photodiodes; cutoff wavelengths; molecular-beam epitaxy; photodetectors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840249
