Analytical Model for Redistribution Profile of Ion-Implanted Impurities During Solid-Phase Epitaxy

Author

Suzuki, Kunihiro ; Kataoka, Yuji ; Nagayama, Susumu ; Magee, Charles W. ; Büyüklimanli, Temel H. ; Nagayama, Tsutomu

Author_Institution

Fujitsu Labs. Ltd., Atsugi

Volume

54

Issue

2

fYear

2007

Firstpage

262

Lastpage

271

Abstract

We evaluated the redistribution profiles of ion-implanted impurities during solid-phase epitaxy using Rutherford backscattering spectrometry (RBS). RBS data revealed that the As concentration changes only near the moving amorphous/crystal interface. We derived an analytical model for the redistribution profiles using a segregation coefficient m between amorphous and crystalline Si, introduced a parameter of reaction length l that is the distance where impurities were exchanged, and obtained good agreement with experimental data with an m value of 3 and an l value of 1 nm for As. Furthermore, we applied our model to P and B redistribution profiles and obtained good agreement with corresponding m value of 4 and l value of 1 nm for P and m value of 0.3 and l value of 1 nm for B

Keywords

Rutherford backscattering; arsenic; boron; impurities; ion implantation; phosphorus; solid phase epitaxial growth; Rutherford backscattering spectrometry; ion implantation; ion-implanted impurities; redistribution profile; segregation coefficient; solid-phase epitaxy; Amorphous materials; Analytical models; Backscatter; Crystallization; Epitaxial growth; Equations; Impurities; Ion implantation; Rapid thermal annealing; Spectroscopy; Arsenic; boron; ion implantation; phosphorous; pileup; solid-phase epitaxy (SPE);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2006.888676

Filename

4067201