Title :
Statistical Model for the Circuit Bandwidth Dependence of Low-Frequency Noise in Deep-Submicrometer MOSFETs
Author :
Wirth, Gilson I. ; Da Silva, Roberto ; Brederlow, Ralf
Author_Institution :
Dept. of Comput. Eng., State Univ. of Rio Grande do Sul, Guaiba
Abstract :
This paper covers measurement, analytical analysis, and Monte Carlo simulation of the frequency and bandwidth dependence of MOSFET low-frequency (LF) noise behavior. The model is based on microscopic device physics parameters, which cause statistical variation in the LF noise behavior of individual devices. Analytical equations for the statistical parameters are provided. The analytical model is compared to experimental data and Monte Carlo simulation results
Keywords :
MOSFET; Monte Carlo methods; semiconductor device models; semiconductor device noise; Monte Carlo simulation; bandwidth dependence; deep-submicrometer MOSFET; frequency dependence; low-frequency noise behavior; microscopic device physics parameters; statistical model; Analytical models; Bandwidth; Circuit noise; Equations; Frequency measurement; Low-frequency noise; MOSFETs; Microscopy; Noise measurement; Physics; Analog circuits; MOS transistors; RF circuits; low-frequency (LF) noise; noise modeling; variability;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2006.888672
