Title :
A Compact Model for Valence-Band Electron Tunneling Current in Partially Depleted SOI MOSFETs
Author :
Wu, W. ; Xin Li ; Gildenblat, G. ; Workman, G.O. ; Veeraraghavan, S. ; McAndrew, C.C. ; van Langevelde, R. ; Smit, G.D.J. ; Scholten, A.J. ; Klaassen, D.B.M.
Author_Institution :
Arizona State Univ., Tempe, AZ
Abstract :
The valence-band electron (EVB) tunneling current in partially depleted silicon-on-insulator (SOI) MOSFETs increases as the gate oxide gets thinner and affects the dynamic behavior of devices and circuits. We present an engineering model of EVB tunneling current based on the surface-potential formulation. The new model is implemented in a SOI MOSFET compact model and is used to study the impact of EVB tunneling on circuit performance. Simulations of stacked logic gates show that the EVB tunneling current not only boosts circuit switching speed but also mitigates the history dependence of propagation delays
Keywords :
MOSFET; semiconductor device models; silicon-on-insulator; surface potential; tunnelling; valence bands; circuit switching speed; partially depleted SOI MOSFET; silicon-on-insulator; surface-potential formulation; symmetric linearization; valence-band electron tunneling current; Hysteresis; silicon-on-insulator (SOI); surface potential; symmetric linearization; valence-band electron (EVB) tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2006.888750
