Title :
Multiplication-dependent frequency responses of InP/InGaAs avalanche photodiode
Author :
Yasuda, K. ; Mikawa, T. ; Kishi, Y. ; Kaneda, T.
Author_Institution :
Fujitsu Laboratories Ltd., Atsugi, Japan
Abstract :
The intrinsic response time of InP/InGaAs APD has been reported. The multiplication factor dependent frequency responses were measured up to multiplication factor of 24. The results show the gain bandwidth of InP/InGaAs APDs is 10 GHz, and the intrinsic response time to be 16 ps.
Keywords :
III-V semiconductors; avalanche photodiodes; frequency response; gallium arsenide; indium compounds; APD; III-V semiconductors; InP/InGaAs avalanche photodiode; gain bandwidth; intrinsic response time; multiplication factor dependent frequency responses;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840257
