• DocumentCode
    991694
  • Title

    InP mixer diodes with etched via ohmic contacts

  • Author

    Christou, A. ; Davey, J.E. ; Tseng, W.F. ; Bark, M.L.

  • Author_Institution
    Naval Research Laboratory, Washington, USA
  • Volume
    20
  • Issue
    9
  • fYear
    1984
  • Firstpage
    378
  • Lastpage
    379
  • Abstract
    InP mixer diodes processed with Ag/TiW/Au Schottky diodes have exhibited a noise figure of 6.5¿7.0 dB at 94 GHz. InP surface preparation is shown to be critical in diode performance. An indium-stabilised surface has resulted in a barrier height of 0.45 eV.
  • Keywords
    III-V semiconductors; Schottky-barrier diodes; indium compounds; mixers (circuits); solid-state microwave devices; Ag/TiW/Au Schottky diodes; III-V semiconductors; InP mixer diodes; barrier height; diode performance; etched via ohmic contacts; noise figure; surface preparation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840261
  • Filename
    4248705
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=991694