Title :
1.5 μm phase adjusted active distributed reflector laser for complete dynamic single-mode operation
Author :
Koyama, Fumio ; Suematsu, Yasuharu ; Kojima, Keisuke ; Furuya, Keiichi
Author_Institution :
Tokyo Institute of Technology, Department of Physical Electronics, Tokyo, Japan
Abstract :
1.5 μm GaInAsP/InP phase adjusted active distributed reflector laser was proposed and fabricated for stable dynamic single-mode operation. Room-temperature CW operation was obtained with the threshold current of 62 mA. Oscillation at the Bragg wavelength was confirmed experimentally.
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; laser modes; semiconductor junction lasers; Bragg wavelength oscillation; CW operation; GaInAsP/InP phase adjusted active distributed reflector laser; dynamic single-mode operation; semiconductor junction laser; threshold current 62 mA; wavelength 1.5 microns;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840271
