Title :
High-frequency small-signal modulation characteristics of short-cavity InGaAsP lasers
Author :
Tucker, R.S. ; Lin, Chinlon ; Burrus, C.A. ; Besomi, P. ; Nelson, R.J.
Author_Institution :
AT&T Bell Laboratories, Crawford Hill Laboratory, Holmdel, USA
Abstract :
Measured small-signal frequency-response characteristics of directly modulated long-cavity and short-cavity InGaAsP double-channel buried-heterostructure (DCBH) lasers are reported. Relaxation oscillation resonance frequencies as high as 9.4 GHz at a bias current of twice threshold have been obtained with short-cavity devices.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical modulation; semiconductor junction lasers; InGaAsP double channel BH laser; bias current; frequency 9.4 GHz; high frequency small signal modulation characteristics; relaxation oscillation resonance frequency; semiconductor junction laser; short-cavity devices; small signal frequency response; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840272
