DocumentCode
991794
Title
High-frequency small-signal modulation characteristics of short-cavity InGaAsP lasers
Author
Tucker, R.S. ; Lin, Chinlon ; Burrus, C.A. ; Besomi, P. ; Nelson, R.J.
Author_Institution
AT&T Bell Laboratories, Crawford Hill Laboratory, Holmdel, USA
Volume
20
Issue
10
fYear
1984
Firstpage
393
Lastpage
394
Abstract
Measured small-signal frequency-response characteristics of directly modulated long-cavity and short-cavity InGaAsP double-channel buried-heterostructure (DCBH) lasers are reported. Relaxation oscillation resonance frequencies as high as 9.4 GHz at a bias current of twice threshold have been obtained with short-cavity devices.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical modulation; semiconductor junction lasers; InGaAsP double channel BH laser; bias current; frequency 9.4 GHz; high frequency small signal modulation characteristics; relaxation oscillation resonance frequency; semiconductor junction laser; short-cavity devices; small signal frequency response; threshold current;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19840272
Filename
4248719
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