Title :
Advanced SPICE modeling of large power IGBT modules
Author :
Azar, Ramy ; Udrea, Florin ; De Silva, Mahesh ; Amaratunga, Gehan ; Ng, Wai Tung ; Dawson, Francis ; Findlay, W. ; Waind, Peter
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
Abstract :
An enhanced insulated gate bipolar transistor (IGBT) model based on the Kraus model with new derivations based on an extra parameter accounting for p-i-n injection was developed to allow simulation of both trench and DMOS IGBT structures. Temperature dependence was also implemented in the model. The model was validated against steady-state and transient measurements done on an 800-A 1.7-kV Dynex IGBT module at 25°C and 125°C. The Spice model has also shown excellent agreement with mixed mode MEDICI simulations. The Spice model also takes into account for the first time the parasitic thyristor effect allowing the dc and dynamic temperature-dependent latchup modeling of power modules as well as their temperature-dependent safe operating area.
Keywords :
SPICE; insulated gate bipolar transistors; power bipolar transistors; semiconductor device models; 1.7 kV; 125 degC; 25 degC; 800 A; DMOS structures; Dynex module; IGBT modules; Kraus model; SPICE modeling; insulated gate bipolar transistor; latchup modeling; p-i-n injection; parasitic thyristor effect; power modules; safe operating area; temperature dependence; trench structures; Immune system; Industry Applications Society; Insulated gate bipolar transistors; Medical simulation; P-i-n diodes; PIN photodiodes; SPICE; Semiconductor optical amplifiers; Temperature dependence; Thyristors; IGBT; Insulated gate bipolar transistor; PSPICE; model; trench IGBT simulation;
Journal_Title :
Industry Applications, IEEE Transactions on
DOI :
10.1109/TIA.2004.827456
