Title :
High-temperature operation of 1.55 μm InGaAsP double-channel buried-heterostructure lasers grown by LPE
Author :
Besomi, P. ; Wilson, R.B. ; Brown, Robert L. ; Dutta, N.K. ; Wright, P.D. ; Nelson, R.J.
Author_Institution :
AT&T Bell Laboratories, Murray Hill, USA
Abstract :
High-temperature operation of InGaAsP double-channel buried-heterostructure (DCBH) lasers emitting at 1.55 μm is reported. The 1.55 μm InGaAsP DCBH lasers have threshold currents as low as 18 mA at 20°C. The threshold current temperature sensitivity between 10°C and 75°C is characterised by a T0 value of 55-66 K. Electro-optical derivative measurements show that the 1.55 μm InGaAsP DCBH laser does not have substantial above-threshold leakage current for junction temperatures as high as 75°C. Finally, these devices were operated at temperatures as high as 110°C, the highest CW operating temperature obtained to date for a 1.55 μm InGaAsP laser.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; liquid phase epitaxial growth; semiconductor junction lasers; 1.55 micron wavelength; CW operating temperature; III-V semiconductors; InGaAsP; LPE; double-channel buried-heterostructure lasers; junction temperatures; semiconductor junction lasers; temperature sensitivity; threshold currents;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840289
