Optical frequency stabilisation of high-power laser diodes under modulation using short optical waveguides

Author

Stephens, W.E. ; Joseph, T.R. ; Findakly, T. ; Chen, Bor-Uei

Author_Institution

TRW Electro-Optics Research Center, Military Electronics Division, Redondo Beach, USA

Volume

20

Issue

10

fYear

1984

Firstpage

424

Lastpage

426

Abstract

A waveguide stabilised laser diode (WSLD) demonstrated high-power single optical frequency operation under both CW and modulated conditions. This device consisted of an AlGaAs CSP laser coupled to an external cavity constructed from a 200 Â¿m-long single-mode ion-exchange waveguide. With an average optical power of 9 mW, the WSLD demonstrated a side-mode suppression ratio greater than 570:1 under CW conditions and greater than 310:1 under modulation with a modulation index of greater than 0.95 at 250 MHz.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; laser frequency stability; optical modulation; semiconductor junction lasers; AlGaAs CSP laser; III-V semiconductors; external cavity; high-power laser diodes; high-power single optical frequency operation; modulation index; optical frequency stability; optical power; semiconductor junction lasers; short optical waveguides; side-mode suppression ratio; single-mode ion-exchange waveguide; waveguide stabilised laser diode;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19840294

Filename

4248745