Lifetime reliability of thin-film SOI nMOSFET´s

The dc device lifetime reliability of thin-film SOI MOSFET´s is investigated over a wide range of drain stress from just below the SOI breakdown voltage up to typical accelerated stress voltages. Unique hot-carrier degradation behaviors were observed for different ranges of applied drain stress. The degradation behavior and mechanism are found to dynamically change from one type observed under low drain stress (realistic operation range) to a different type observed under high drain stress (strong breakdown operation). This causes the SOI MOSFET to exhibit a two slope lifetime versus reciprocal drain voltage behavior which could have strong implications on the hot-carrier stressing methodology and reliability study of these devices.<>