High gain AlInAs/GaInAs/InP HEMT´s with individually grounded source finger vias

Author

Hur, Katerina Y. ; McTaggart, Rebecca A. ; Ventresca, Marco P. ; Wohlert, Ratana ; Aucoin, Lisa M. ; Kazior, Thomas E.

Author_Institution

Res. Div., Raytheon Co., Lexington, MA, USA

Volume

16

Issue

9

fYear

1995

Firstpage

390

Lastpage

392

Abstract

High gain, millimeter wave AlInAs/GaInAs/InP HEMT´s with individually grounded source finger vias have been fabricated for the first time using a high resolution Cl/sub 2/:HBr:BCl/sub 3/:Ar RIE process. For comparison of device characteristics at millimeter wave frequencies, HEMT´s with end source vias were also fabricated on the same wafer. Fixtured RF characterization has revealed significant reduction in source inductance and reverse transmission in addition to higher gain on devices with individual source vias. These superior RF characteristics exhibited by the HEMT with individually grounded source finger vias illustrate the importance of the via technology for high performance InP-based millimeter wave system applications.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; millimetre wave field effect transistors; semiconductor technology; sputter etching; AlGaAs-GaInAs-InP; AlInAs/GaInAs/InP HEMTs; RF characteristics; gain; high resolution Cl/sub 2/:HBr:BCl/sub 3/:Ar RIE; individually grounded source finger vias; millimeter wave frequencies; reverse transmission; source inductance; Dry etching; Fingers; HEMTs; Indium phosphide; Inductance; Integrated circuit technology; Millimeter wave integrated circuits; Millimeter wave technology; Radio frequency; Wet etching;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.406798

Filename

406798