Title :
Sub-half-micrometer pseudomorphic InP/In/sub x/Ga/sub 1-x/As/InP HEMT´s (0.74/spl les/x/spl les/0.81) with very high fT values
Author :
Mesquida Kusters, A. ; Wuller, R. ; Geelen, H.J. ; Kohl, A. ; Heime, K.
Author_Institution :
Corp. Res. & Dev., Siemens AG, Munich, Germany
Abstract :
In the recent past, strained Al-free InP/In/sub x/Ga/sub 1-x/As/InP high electron mobility transistors (HEMT´s) with x>53% and L/sub G//spl ges/0.5 μm have shown very good performance mainly caused by the exceptional transport properties of electrons in In-rich In/sub x/Ga/sub 1-x/As-channel layers. We report about new results for highly strained devices with L/sub G/<0.5 μm. Thereby, current gain cut-off frequencies of fT=100 GHz (130 GHz) for x=74% and L/sub G/=0.3 μm at 300 K (80 K) were achieved, respectively, whereas HEMT´s with x=81% and L/sub G/=0.18 μm reached fT=131 GHz (152 GHz) at the same temperatures. Moreover, the same devices showed off- and on-state drain-source breakdown voltages of V/sub DSbr/ (OFF)=10.5 and 5 V and V/sub DSbr/ (ON)=6 and 4 V, respectively. The combination of good RF and breakdown performance prove the potential of Al-free InP-based HEMT´s for power applications at mm-wave frequencies.
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; 0.18 to 0.3 micron; 100 to 152 GHz; 4 to 10.5 V; 80 to 300 K; InP-InGaAs-InP; MM-wave frequencies; RF performance; current gain cut-off frequencies; drain-source breakdown voltages; high electron mobility transistors; power applications; strained devices; sub-half-micrometer pseudomorphic HEMTs; transport properties; Cutoff frequency; Electric breakdown; Electron mobility; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Radio frequency; Temperature;
Journal_Title :
Electron Device Letters, IEEE
