A new high-performance lateral insulated gate bipolar transistor formed on Quasi-SOI

In the proposed LIGBT/Quasi-SOI, the buried oxide layer of the Quasi-SOI is partially removed at the bottom of the channel region and this channel region is directly connected to the low-resistivity p-type substrate. This structure significantly reduces the base resistance of the parasitic npn-bipolar transistor and significantly increases its latch up current. Simulation of the electrical characteristics of the proposed LIGBT/Quasi-SOI showed that, at a substrate resistivity of 20 m/spl Omega//spl middot/cm, latch up free operation can be obtained.<>