Title :
A new high-performance lateral insulated gate bipolar transistor formed on Quasi-SOI
Author :
Matsumoto, Satoshi ; Kim, Jung ; Yachi, Toshiaki
Author_Institution :
NTT Interdisciplinary Res. Labs., Tokyo, Japan
Abstract :
In the proposed LIGBT/Quasi-SOI, the buried oxide layer of the Quasi-SOI is partially removed at the bottom of the channel region and this channel region is directly connected to the low-resistivity p-type substrate. This structure significantly reduces the base resistance of the parasitic npn-bipolar transistor and significantly increases its latch up current. Simulation of the electrical characteristics of the proposed LIGBT/Quasi-SOI showed that, at a substrate resistivity of 20 m/spl Omega//spl middot/cm, latch up free operation can be obtained.<>
Keywords :
insulated gate bipolar transistors; silicon-on-insulator; LIGBT/Quasi-SOI; base resistance; buried oxide layer; electrical characteristics; latch up current; lateral insulated gate bipolar transistor; low-resistivity p-type substrate; parasitic npn-bipolar transistor; simulation; Conductivity; Electric variables; Insulated gate bipolar transistors; Latches; MOSFET circuits; Medical simulation; Silicon on insulator technology; Substrates; Thin film devices; Thyristors;
Journal_Title :
Electron Device Letters, IEEE
