DocumentCode
992153
Title
A new Insulated-Gate Thyristor structure with turn-off achieved by controlling the base-resistance
Author
Ajit, J.S.
Author_Institution
Int. Rectifier Corp., El Segundo, CA, USA
Volume
16
Issue
9
fYear
1995
Firstpage
411
Lastpage
413
Abstract
A new Insulated-Gate Thyristor (IGTH) design for achieving high controllable current capability is described. The design consists of square cells with high density of MOS-channels modulating the resistance of the base region of the NPN transistor of the thyristor structure. The diagonal regions between the square cells is used as the turn-on regions while the other regions under the MOS gate between the cell diffusions are connected by P/sup -/ diffusion to obtain a MOS-gate controlled low resistance path for turn-off. The IGTH was fabricated using a double-diffused DMOS process and 1200 V devices with controllable currents in excess of 150 A was obtained.<>
Keywords
MOS-controlled thyristors; 1200 V; 150 A; MOS channels; NPN transistor; P/sup -/ diffusion; base resistance; double-diffused DMOS proces; insulated-gate thyristor; square cells; turn-off; Electron emission; HVDC transmission; Impedance; Insulation; MOSFET circuits; Product development; Rectifiers; Testing; Thyristors; Voltage control;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.406805
Filename
406805
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