• DocumentCode
    992168
  • Title

    Annealing of Mg implants in GaAs using incoherent radiation

  • Author

    Blunt, R.T. ; Szweda, R. ; Lamb, M.S.M. ; Cullis, A.G.

  • Author_Institution
    Plessey Research (Caswell) Ltd., Towcester, UK
  • Volume
    20
  • Issue
    11
  • fYear
    1984
  • Firstpage
    444
  • Lastpage
    446
  • Abstract
    Results of incoherent light transient annealing of Mg implants in GaAs are reported and compared to conventional furnace anneals. Transient anneals produced better activations, with an optimum at an annealing temperature of 800°C, due apparently to reduced outdiffusion of Mg into the encapsulating silicon nitride layer.
  • Keywords
    III-V semiconductors; annealing; gallium arsenide; ion implantation; semiconductor technology; GaAs; Mg implants; Si3N4 encapsulating layers; electrical activation; flash lamp annealing; incoherent light transient annealing; incoherent radiation; ion implantation; reduced outdiffusion; semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840309
  • Filename
    4248765
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=992168