• DocumentCode
    992334
  • Title

    n+ -GaAs/undoped GaAlAs/undoped GaAs field-effect transistor

  • Author

    Matsumoto, Kaname ; Ogura, M. ; Wada, Tomotaka ; Hashizume, Nobuya ; Yao, Tingfeng ; Hayashi, Yasuhiro

  • Author_Institution
    Electrotechnical Laboratory, Tsukuba, Japan
  • Volume
    20
  • Issue
    11
  • fYear
    1984
  • Firstpage
    462
  • Lastpage
    463
  • Abstract
    The first self aligned accumulation-mode GaAs MIS-like FET having an n+ -GaAs/undoped GaAlAs/undoped GaAs structure is reported. The FETs fabricated show the threshold voltage of almost zero (V¿th = 0.035 V) and very uniform (¿Vth = 0.013 V) characteristics, as expected. The transconductance is as high as 170 mS/mm, which is the highest value ever reported on GaAs MIS-like FETs.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; insulated gate field effect transistors; semiconductor-insulator-semiconductor structures; 170 mS/mm; GaAs/GaAlAs/GaAs; III-V semiconductors; MIS-like FET; SISFET; n+-type GaAs gate; self aligned accumulation mode device; semiconductor-insulator-semiconductor structure; threshold voltage; transconductance; undoped GaAlAs; undoped GaAs;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840323
  • Filename
    4248782
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=992334