Title :
Wide tuning range LC-oscillator in 65nm SOI CMOS, based on switchable secondary inductor
Author :
Morf, T. ; Kossel, M. ; Weiss, J. ; Menolfi, C. ; Toifl, T. ; von Bueren, G. ; Buchmann, P. ; Schmatz, M.
Author_Institution :
IBM Zurich Res. Lab., Zurich
Abstract :
An LC-based VCO in standard 65 nm CMOS SOI technology is presented. The VCO exhibits a measured tuning range 6.4-11.3 GHz. The tuning range is significantly extended by a combination of switchable inductor and capacitor banks. The switchable inductor consists of two magnetically coupled spiral inductors. The secondary coil can be either open or closed with a large FET switch, which in closed condition significantly reduces the inductance of the main coil by means of mutual inductance.
Keywords :
CMOS integrated circuits; capacitors; field effect transistors; inductors; nanoelectronics; silicon-on-insulator; CMOS SOI technology; FET switch; LC-oscillator; SOI CMOS; capacitor banks; coil inductance reduction; magnetically coupled spiral inductors; mutual inductance; size 65 nm; switchable inductor; switchable secondary inductor; wide tuning range;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20072909
