Title :
High-performance GaAs-GaAlAs phase modulators for PSK optical fibre systems
Author :
Houghton, A.J.N. ; Rodgers, P.M. ; Andrews, David A.
Author_Institution :
British Telecom Research Laboratories, Ipswich, UK
Abstract :
GaAs-GaAlAs monomode phase modulators have been made from MBE-grown heterostructures using reproducible fabrication techniques. A ¿ phase shift at 9 V was obtained for a device length of 4.2 mm. With an internal optical loss <2.5 dB and modulation capability to >1.2 Gbit s¿1, these devices show superior overall performance to any previously reported semiconductor guided-wave devices.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; molecular beam epitaxial growth; optical modulation; optical waveguide components; phase shift keying; GaAs-GaAlAs; III-V semiconductors; MBE-grown heterostructures; PSK optical fibre systems; fabrication techniques; integrated optics; monomode phase modulators; optical communication equipment; optical waveguide components;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840335
