Title :
Electron transport through the MOCVD grown GaAs/AlGaAs/GaAs heterojunction barrier
Author :
Hase, I. ; Kawai, Hiroyuki ; Kaneko, Kunihiko ; Watanabe, N.
Author_Institution :
Sony Corporation, Research Center, Yokohama, Japan
Abstract :
We investigated the current/voltage characteristics of n+GaAs/undoped AlxGa1¿xAs (200 A)/n+GaAs heterostructures grown by the metalorganic chemical vapour deposition (MOCVD) method between 77 K and 300 K. Both the voltage dependence and the temperature dependence of the current were in good agreement over a wide current range with the calculated results of the tunnelling and thermionic emission current.
Keywords :
CVD coatings; III-V semiconductors; aluminium compounds; carrier mobility; gallium arsenide; semiconductor junctions; tunnelling; GaAs/AlGaAs/GaAs heterojunction barrier; III-V semiconductors; current/voltage characteristics; metalorganic chemical vapour deposition; n+GaAs/undoped AlxGa1-xAs (200 A)/n+GaAs heterostructures; temperature dependence; thermionic emission current; tunnelling; voltage dependence;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840341
