• DocumentCode
    992527
  • Title

    Analysis of high-speed and high-gain n-InP transferred electron effect photodetector

  • Author

    Aishima, A. ; Fukushima, V.

  • Author_Institution
    Hiroshima University, Department of Electronic Engineering, Higashihiroshima, Japan
  • Volume
    20
  • Issue
    12
  • fYear
    1984
  • Firstpage
    492
  • Lastpage
    494
  • Abstract
    By illuminating the small area of the semitransparent Schottky barrier cathode of an n-InP diode with above-bandgap radiation, the travelling dipole domain can be triggered. The dipole domain transversely extends with a velocity of 108 cms¿1. The nature of high travelling speed and high extension speed of the dipole domain can be used for achieving a high-speed and high-gain n-InP photodetector.
  • Keywords
    Gunn diodes; III-V semiconductors; indium compounds; optical communication equipment; photodetectors; photodiodes; III-V semiconductors; above-bandgap radiation; extension speed; n-InP transferred electron effect photodetector; optical communication; photodiodes; semitransparent Schottky barrier cathode; travelling dipole domain; travelling speed;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840342
  • Filename
    4248807
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=992527