Title :
Analysis of high-speed and high-gain n-InP transferred electron effect photodetector
Author :
Aishima, A. ; Fukushima, V.
Author_Institution :
Hiroshima University, Department of Electronic Engineering, Higashihiroshima, Japan
Abstract :
By illuminating the small area of the semitransparent Schottky barrier cathode of an n-InP diode with above-bandgap radiation, the travelling dipole domain can be triggered. The dipole domain transversely extends with a velocity of 108 cms¿1. The nature of high travelling speed and high extension speed of the dipole domain can be used for achieving a high-speed and high-gain n-InP photodetector.
Keywords :
Gunn diodes; III-V semiconductors; indium compounds; optical communication equipment; photodetectors; photodiodes; III-V semiconductors; above-bandgap radiation; extension speed; n-InP transferred electron effect photodetector; optical communication; photodiodes; semitransparent Schottky barrier cathode; travelling dipole domain; travelling speed;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840342
