Title :
Gate substrate effect on RF CMOS device noise
Author :
Xiong, Y.Z. ; Shi, J. ; Lan, N. ; Lin, F.
Author_Institution :
Inst. of Microelectron., Singapore
Abstract :
The gate substrate effect on RF CMOS device noise is investigated. The gate substrate resistance (Rgb) noise contribution to the total RF device minimum noise figures (NFmin) is obtained. The results show that the gate substrate resistance noise is considerable in a certain frequency range for 90 nm CMOS devices.
Keywords :
CMOS integrated circuits; radiofrequency integrated circuits; RF CMOS device noise; gate substrate effect; gate substrate resistance noise; size 90 nm;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20072255
