Title :
Room temperature memory operation of electron Y-branch switch with embedded quantum dots
Author :
Müller, C.R. ; Worschech, L. ; Forchel, A.
Author_Institution :
Univ. Wurzburg, Wurzburg
Abstract :
The floating gate function of quantum dots embedded in an electron Y-branch switch is studied up to room temperature. The device is based on a GaAs/AlGaAs heterostructure with a single layer of self- assembled InGaAs quantum dots positioned in close vicinity to a two-dimensional electron gas. The enhanced memory operation of Y-branches is attributed to the capacitive couplings in the nanojunction.
Keywords :
III-V semiconductors; aluminium compounds; electron gas; gallium arsenide; indium compounds; quantum dots; self-assembly; single electron devices; GaAs-AlGaAs; InGaAs; electron Y-branch switch; embedded quantum dots; floating gate function; room temperature memory operation; self- assembled quantum dots;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20072341
