• DocumentCode
    992584
  • Title

    Room temperature memory operation of electron Y-branch switch with embedded quantum dots

  • Author

    Müller, C.R. ; Worschech, L. ; Forchel, A.

  • Author_Institution
    Univ. Wurzburg, Wurzburg
  • Volume
    43
  • Issue
    24
  • fYear
    2007
  • Firstpage
    1392
  • Lastpage
    1393
  • Abstract
    The floating gate function of quantum dots embedded in an electron Y-branch switch is studied up to room temperature. The device is based on a GaAs/AlGaAs heterostructure with a single layer of self- assembled InGaAs quantum dots positioned in close vicinity to a two-dimensional electron gas. The enhanced memory operation of Y-branches is attributed to the capacitive couplings in the nanojunction.
  • Keywords
    III-V semiconductors; aluminium compounds; electron gas; gallium arsenide; indium compounds; quantum dots; self-assembly; single electron devices; GaAs-AlGaAs; InGaAs; electron Y-branch switch; embedded quantum dots; floating gate function; room temperature memory operation; self- assembled quantum dots;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20072341
  • Filename
    4391013
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=992584