Title :
InGaAs Gunn oscillators
Author :
Kowalsky, Wolfgang ; Schlachetzki, A.
Author_Institution :
Technische Universitÿt Braunschweig, Institut fÿr Hochfrequenztechnik, Braunschweig, West Germany
Abstract :
Measurements with Gunn oscillators made from epitaxial layers of the ternary InGaAs lattice matched to InP are reported. Operation in the domain mode was chosen. First results are given demonstrating the potential of this alloy for high-efficiency Gunn devices.
Keywords :
Gunn oscillators; III-V semiconductors; gallium arsenide; indium compounds; Gunn oscillators; domain mode; epitaxial layers; high-efficiency Gunn devices; ternary InGaAs lattice;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840349
