• DocumentCode
    992598
  • Title

    InGaAs Gunn oscillators

  • Author

    Kowalsky, Wolfgang ; Schlachetzki, A.

  • Author_Institution
    Technische Universitÿt Braunschweig, Institut fÿr Hochfrequenztechnik, Braunschweig, West Germany
  • Volume
    20
  • Issue
    12
  • fYear
    1984
  • Firstpage
    502
  • Lastpage
    503
  • Abstract
    Measurements with Gunn oscillators made from epitaxial layers of the ternary InGaAs lattice matched to InP are reported. Operation in the domain mode was chosen. First results are given demonstrating the potential of this alloy for high-efficiency Gunn devices.
  • Keywords
    Gunn oscillators; III-V semiconductors; gallium arsenide; indium compounds; Gunn oscillators; domain mode; epitaxial layers; high-efficiency Gunn devices; ternary InGaAs lattice;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840349
  • Filename
    4248814
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=992598