Title :
Cryogenic GaAs FET amplifier
Author_Institution :
University of Cambridge, Mullard Radio Astronomy Observatory, Cavendish Laboratory, Cambridge, UK
Abstract :
An extremely low noise, cryogenic, gallium arsenide field-effect-transistor amplifier has been developed for the frequency range 3.7 to 4.2 GHz. The amplifier has an average noise temperature of 25 K, with an associated gain of 21 dB, when cooled to a physical temperature of 77 K.
Keywords :
III-V semiconductors; cryogenics; field effect transistor circuits; gallium arsenide; microwave amplifiers; solid-state microwave circuits; 21 dB gain; 25K noise temperature; 3.7 to 4.2 GHz; 77K; FET amplifier; GaAs; III-V semiconductors; SHF; cryogenic type; solid-state microwave circuits;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840352
