Title :
Improvement of crystalline quality of the surface layer in buried implanted oxide structures by silicon implantation
Author :
Das, K. ; McClelland, S. ; Butcher, J.B.
Author_Institution :
Middlesex Polytechnic, Microelectronics Centre, London, UK
Abstract :
An improvement of the crystalline quality of the surface layer in buried implanted oxide structures in silicon has been achieved by silicon in implantation and subsequent 570°C anneal treatment.
Keywords :
elemental semiconductors; ion implantation; semiconductor technology; silicon; SOI; Si implantation; anneal treatment; buried implanted oxide structures; crystalline quality improvement; ion implantation; surface layer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840365
