Title :
Nonabsorbing-mirror (NAM) CDH-LOC diode lasers
Author :
Botez, D. ; Connolly, J.C.
Author_Institution :
RCA Laboratories, Princeton, USA
Abstract :
CDH-LOC lasers with lateral and transverse mode control in nonabsorbing mirror regions are realised by a single etch-and-regrowth cycle. The maximum achieved peak-pulsed output power (100 ns) and catastrophic-optical-damage (power-density) levels are 1.5 W and (20¿30) MW/cm2, respectively. A linear power density of 200 mW/¿m is reached at catastrophic damage. Fundamental-mode operation is obtained to 80 mW in narrow beams (¿¿¿7°; ¿¿¿15°).
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; semiconductor junction lasers; CDH-LOC diode lasers; NAM; catastrophic-optical-damage power-density levels; constricted double heterojunction lasers; fundamental mode operation; large optical cavity; lateral mode control; linear power density; narrow beams; nonabsorbing mirror; peak-pulsed output power; semiconductor lasers; single etch regrowth cycle; transverse mode control;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840368
