DocumentCode
992828
Title
Polysilicon base contact in I2L transistors
Author
El-Diwany, M.H. ; Eltoukhy, A.S.
Author_Institution
Fairchild Research Center, Palo Alto, USA
Volume
20
Issue
13
fYear
1984
Firstpage
536
Lastpage
538
Abstract
The extrinsic base diode minority carrier distribution under poly in I2L transistors can be calculated (or computed) in terms of an effective surface recombination velocity Seff at the mono/poly silicon interface similar to the oxide and metal cases. An analytical expression for Seff as a function of polysilicon parameters is given and compared to numerical solutions. Calculated ring speeds show a slight improvement in propagation delay for metal contact compared to poly contact.
Keywords
bipolar integrated circuits; bipolar transistors; integrated circuit technology; integrated injection logic; integrated logic circuits; semiconductor technology; I2L; MTL; extrinsic base diode minority carrier distribution; metal contact; mono/poly-Si interface; numerical solutions; poly-Si base contact; poly-Si contact; propagation delay; ring speeds; surface recombination velocity;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19840372
Filename
4248840
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