Title :
Polysilicon base contact in I2L transistors
Author :
El-Diwany, M.H. ; Eltoukhy, A.S.
Author_Institution :
Fairchild Research Center, Palo Alto, USA
Abstract :
The extrinsic base diode minority carrier distribution under poly in I2L transistors can be calculated (or computed) in terms of an effective surface recombination velocity Seff at the mono/poly silicon interface similar to the oxide and metal cases. An analytical expression for Seff as a function of polysilicon parameters is given and compared to numerical solutions. Calculated ring speeds show a slight improvement in propagation delay for metal contact compared to poly contact.
Keywords :
bipolar integrated circuits; bipolar transistors; integrated circuit technology; integrated injection logic; integrated logic circuits; semiconductor technology; I2L; MTL; extrinsic base diode minority carrier distribution; metal contact; mono/poly-Si interface; numerical solutions; poly-Si base contact; poly-Si contact; propagation delay; ring speeds; surface recombination velocity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840372
