Title :
Theoretical investigation of photo heterojunction bipolar cathode transferred electron device for high-speed data optical-millimeter-wave self-up-converter
Author :
Dalle, Christophe
Author_Institution :
Dept. Hyperfrequences et Semiconducteurs, Inst. d´´Electronique, Villeneuve d´´Ascq, France
fDate :
6/1/2004 12:00:00 AM
Abstract :
The potential of InP-InGaAs-InP n+ p+ nn+ photoheterojunction bipolar cathode transferred electron device (PHeBiCTED) is investigated by means of a general time domain circuit simulator associated with a full two-dimensional hydrodynamic physical modeling of the semiconductor device. The PHeBiCTED capabilities as a 160-GHz millimeter-wave (mm-wave) generator were investigated first. Then, the theoretical feasibility of a PHeBiCTED-based optical-mm-wave self-up-converter is demonstrated.
Keywords :
III-V semiconductors; circuit simulation; convertors; gallium arsenide; heterojunction bipolar transistors; indium compounds; millimetre wave devices; optoelectronic devices; time-domain analysis; InP-InGaAs-InP; PHeBiCTED oscillator; high-speed data optical-millimeter-wave; hydrodynamic physical modeling; millimeter-wave generator; optoelectronic device; photo heterojunction bipolar cathode; photoheterojunction bipolar cathode transferred electron device; self-up-converter; semiconductor device modeling; time domain circuit simulator; time-domain physical modeling; Cathodes; Circuit simulation; Electron optics; Gunn devices; Heterojunctions; High speed optical techniques; Hydrodynamics; Millimeter wave circuits; Optical devices; Semiconductor devices; Millimeter-wave; PHeBiCTED oscillator; mm-wave; optoelectronic; self-up-converter; time-domain physical modeling;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2004.827363
