• DocumentCode
    992847
  • Title

    Dynamic response of an electronically shuttered CCD imager

  • Author

    Rathman, D.D. ; O´Mara, D.M. ; Rose, M.K. ; Osgood, R.M., III ; Reich, R.K.

  • Author_Institution
    Lincoln Lab., Massachussetts Inst. of Technol., Lexington, MA, USA
  • Volume
    51
  • Issue
    6
  • fYear
    2004
  • fDate
    6/1/2004 12:00:00 AM
  • Firstpage
    864
  • Lastpage
    869
  • Abstract
    The dynamic response of an electronically shuttered charge-coupled device (CCD) imager to nanosecond voltage pulses has been investigated. Measurements show that the shutter can be dynamically opened and closed in nanosecond times. For the shutter opening, simulations indicate that the collection of photoelectrons occurs in times much shorter than that needed to form the steady-state depletion region under the CCD well. In addition, the shutter closing occurs faster than the reconstitution of the p-buried (shutter) layer. Simulations further indicate that electric fields created in the neutral substrate by the shutter clocks enable photogenerated charge collection/rejection on nanosecond time scales despite the fact that the depletion-region formation and collapse take much longer times.
  • Keywords
    CCD image sensors; charge-coupled devices; electric field effects; photodetectors; transient response; CCD image sensors; charge-coupled device; electric field effect; electric fields; electric potential; electronic shutter; electronically shuttered CCD imager; nanosecond voltage pulses; neutral substrate; p-buried shutter layer; photo-electrons; photodetectors; photogenerated charge collection; photogenerated charge rejection; shutter clocks; shutter opening; steady-state depletion region; CMOS image sensors; Charge coupled devices; Charge transfer; Image sampling; Image sensors; Infrared detectors; Nanoscale devices; Photodiodes; Pixel; Transient response; CCD; Charge-coupled device; electric field effect; electric potential; electronic shutter; image sensors; photodetectors; transient response;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2004.828168
  • Filename
    1300818