Title :
MEXTRAM modeling of Si-SiGe HPTs
Author :
Yuan, Feng ; Shi, Jin-Wei ; Pei, Zingway ; Wee Liu, Chee
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fDate :
6/1/2004 12:00:00 AM
Abstract :
The integration of the photodetector is essential for optical communication chips. The heterojunction phototransistor (HPT) is integrable with the SiGe HBT process and can be modeled by a modified MEXTRAM model for the circuit simulation. The impact ionization to obtain an extra gain for the optoelectronic conversion and the "early voltage reduction" under constant illumination are well modeled in a modified model. The base recombination current (nkT current) and the substrate contact to enhance the HPT speed are incorporated in ac model. It shows a good agreement between measurement and simulation.
Keywords :
Ge-Si alloys; circuit simulation; elemental semiconductors; heterojunction bipolar transistors; impact ionisation; photodetectors; phototransistors; semiconductor device models; semiconductor materials; silicon; MEXTRAM modeling; Si-SiGe HPT; SiGe-Si; circuit simulation; heterojunction phototransistor; nkT recombination current; optical communication chips; optoelectronic conversion; photodetector; Circuit simulation; Germanium silicon alloys; Heterojunction bipolar transistors; Impact ionization; Lighting; Optical fiber communication; Photodetectors; Phototransistors; Silicon germanium; Voltage; $nkT$ recombination current; HPT; Heterojunction phototransistor; MEXTRAM; SiGe; photodetector;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2004.829622
