Title :
Broad-area InAs/GaAs quantum dot lasers incorporating intermixed passive waveguide
Author :
Gordeev, N.Yu. ; Tan, W.K. ; Bryce, A.C. ; Novikov, I.I. ; Kryzhanovskaya, N.V. ; Kuznetsov, S.M. ; Gladyshev, A.G. ; Maximov, M.V. ; Mikhrin, S.S. ; Marsh, J.H.
Author_Institution :
A.F. Ioffe Inst., St. Petersburg
Abstract :
InAs/GaAs quantum dot lasers incorporating passive waveguide created by post-growth intermixing processing have been studied. Emission wavelength of the passive section shows relative blueshift as high as 135 nm with respect to the emission wavelength of the active section. Intrinsic losses in the section formed by the intermixing are very small. Broad-area lasers with 100 mum stripe width incorporating intermixed section have demonstrated improvements in far-field pattern under both pulsed and continuous wave pumping current
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; quantum dot lasers; spectral line shift; waveguide lasers; 100 micron; 135 nm; InAs-GaAs; continuous wave pumping current; intermixed passive waveguide; pulsed wave pumping current; quantum dot lasers;
Journal_Title :
Electronics Letters
