DocumentCode
992868
Title
Broad-area InAs/GaAs quantum dot lasers incorporating intermixed passive waveguide
Author
Gordeev, N.Yu. ; Tan, W.K. ; Bryce, A.C. ; Novikov, I.I. ; Kryzhanovskaya, N.V. ; Kuznetsov, S.M. ; Gladyshev, A.G. ; Maximov, M.V. ; Mikhrin, S.S. ; Marsh, J.H.
Author_Institution
A.F. Ioffe Inst., St. Petersburg
Volume
43
Issue
1
fYear
2007
Firstpage
29
Lastpage
30
Abstract
InAs/GaAs quantum dot lasers incorporating passive waveguide created by post-growth intermixing processing have been studied. Emission wavelength of the passive section shows relative blueshift as high as 135 nm with respect to the emission wavelength of the active section. Intrinsic losses in the section formed by the intermixing are very small. Broad-area lasers with 100 mum stripe width incorporating intermixed section have demonstrated improvements in far-field pattern under both pulsed and continuous wave pumping current
Keywords
III-V semiconductors; gallium arsenide; indium compounds; quantum dot lasers; spectral line shift; waveguide lasers; 100 micron; 135 nm; InAs-GaAs; continuous wave pumping current; intermixed passive waveguide; pulsed wave pumping current; quantum dot lasers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
4068476
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