Title :
Wavelength tuning of InAs/InAlGaAs quantum-dash-in-well laser using postgrowth intermixing
Author :
Djie, H.S. ; Wang, Y. ; Ooi, B.S. ; Wang, D.N. ; Hwang, J. C M ; Fang, X.-M. ; Wu, Y. ; Fastenau, J.M. ; Liu, W.K. ; Dang, G.T. ; Chang, W.H.
Author_Institution :
Lehigh Univ., Bethlehem, PA
Abstract :
The first demonstration is reported of a bandgap tuned laser using InAs/InAlGaAs quantum-dash-in-well structures on an InP substrate, which utilises impurity-free induced intermixing. The intermixed laser exhibits comparable light-current characteristics after the bandgap is postgrowth-tuned by 100 nm
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser tuning; quantum dot lasers; quantum well lasers; 100 nm; InAs-InAlGaAs; intermixed laser; quantum dash in well structures; wavelength tuning;
Journal_Title :
Electronics Letters
