DocumentCode :
992970
Title :
Defocus-Aware Leakage Estimation and Control
Author :
Kahng, Andrew B. ; Muddu, Swamy ; Sharma, Puneet
Author_Institution :
Dept. of Comput. Sci. & Eng., Univ. of California at San Diego, La Jolla, CA
Volume :
27
Issue :
2
fYear :
2008
Firstpage :
230
Lastpage :
240
Abstract :
Leakage power is one of the most critical issues for ultradeep submicrometer technology. Subthreshold leakage depends nearly exponentially on linewidth, and consequently, variation in linewidth translates to a large leakage variation. A significant fraction of variation in the linewidth occurs due to systematic variations involving focus and pitch. In this paper, we propose a new leakage-estimation methodology that accounts for focus-dependent variation in the linewidth. Our approach computes the pitch of each device in the design and uses it along with defocus information to predict the linewidth of the device. Once the linewidths of the devices in a cell are calculated, the cell leakage is computed to be the sum of leakages of all off-devices in the cell; device leakages are found from a linewidth-leakage table that is precharacterized with SPICE simulations. The presented methodology significantly improves the leakage estimation and can be used in existing leakage-reduction techniques to improve their efficacy. To demonstrate the use of our approach for leakage reduction, we modify the previously proposed linewidth-biasing technique of Gupta to consider the systematic variations in linewidth and further optimize the leakage power. Our method reduces the leakage spread between worst and best process corners by up to 62% compared with the conventional corner-based analysis. Defocus awareness improves the leakage reduction from linewidth-biasing by up to 7%.
Keywords :
electrical faults; nanotechnology; SPICE simulations; defocus-aware leakage estimation; leakage control; subthreshold leakage; ultradeep submicrometer technology; Computational modeling; Gate leakage; High-K gate dielectrics; Lithography; MOS devices; Predictive models; SPICE; Subthreshold current; Temperature; Threshold voltage; Estimation; leakage power; lithography; optimization; topography;
fLanguage :
English
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
0278-0070
Type :
jour
DOI :
10.1109/TCAD.2007.913387
Filename :
4391073
Link To Document :
بازگشت