DocumentCode :
992990
Title :
Area Optimization for Leakage Reduction and Thermal Stability in Nanometer-Scale Technologies
Author :
Ku, Ja Chun ; Ismail, Yehea
Author_Institution :
Syst. LSI Div., Samsung Electron. Co. Ltd., Yongin
Volume :
27
Issue :
2
fYear :
2008
Firstpage :
241
Lastpage :
248
Abstract :
Traditionally, the minimum possible area of a very large scale integration (VLSI) layout is considered to be the best for delay and power minimization due to decreased interconnect capacitance. This paper, however, shows that the use of minimum area does not result in minimum power and/or delay in nanometer-scale technologies due to thermal effects and, in some cases, may cause thermal runaway. A methodology using area as a design parameter to reduce the leakage power and prevent thermal runaway is presented. A 16-bit adder example in 70-nm technology shows total power savings of 17% with 15% increase in area and no increase in delay. The power savings using this technique are expected to increase in future technologies.
Keywords :
VLSI; adders; delays; integrated circuit layout; leakage currents; low-power electronics; nanoelectronics; thermal stability; 16-bit adder; VLSI layout; area optimization; delay minimization; interconnect capacitance; leakage reduction; nanometer-scale technologies; power saving technique; size 70 nm; thermal effects; thermal runaway; thermal stability; very large scale integration; Capacitance; Delay; Integrated circuit interconnections; Power system modeling; Subthreshold current; Temperature; Thermal resistance; Thermal stability; Threshold voltage; Very large scale integration; Layout; Leakage; Temperature; VLSI; leakage; temperature; very large scale integration (VLSI);
fLanguage :
English
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
0278-0070
Type :
jour
DOI :
10.1109/TCAD.2007.913393
Filename :
4391075
Link To Document :
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