Title :
Low-threshold current density InGaAsP/InP injection lasers with three-layer-waveguide double heterostructure (jth≅0.5 kA/cm2 at 300 K)
Author :
Drakin, A.E. ; Eliseev, P.G. ; Sverdlov, B.N. ; Dolginov, L.M. ; Shevchenko, E.G.
Author_Institution :
Academy of Sciences of the USSR, P.N. Lebedev Physical Institute, Moscow, USSR
Abstract :
Double heterostructure InGaAsP/InP lasers with a three-layer waveguide (or ´separate-confinement´ DH) have been prepared by the LPE method with a thin active layer. A decrease in threshold current density has been observed up to 512 A/cm2 in a four-sided cleaved diode at room temperature. CW operation of broad-area diodes is obtained in the pumping current range up to 2.5 A. Calculations of threshold current density for these laser structures are presented.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; liquid phase epitaxial growth; optical waveguides; semiconductor junction lasers; 300K; CW operation; III-V semiconductors; InGaAsP/InP injection lasers; LPE method; broad-area diodes; four-sided cleaved diode; integrated optics; liquid phase epitaxial growth; room temperature; semiconductor DH laser; three-layer-waveguide double heterostructure; threshold current density reduction;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840388
