DocumentCode
993005
Title
Surface electrical breakdown with white-light emission on semi-insulating GaAs substrates
Author
Hasegawa, Hiroshi ; Kitagawa, Tomotaka ; Sawada, Tsuyoshi ; Ohno, Hideo
Author_Institution
Hokkaido University, Department of Electrical Engineering, Faculty of Engineering, Sapporo, Japan
Volume
20
Issue
13
fYear
1984
Firstpage
561
Lastpage
562
Abstract
Electrical breakdown on surface passivated semi-insulating GaAs substrates is shown to be accompanied with white-light emission from ohmic electrode edges. It cannot be explained by the previous space-charge-limited current model. A new model is proposed in which filling of states near the surface produces an intense electric field near the anode edge and triggers an avalanche.
Keywords
III-V semiconductors; electric breakdown of solids; electroluminescence; field effect integrated circuits; gallium arsenide; large scale integration; ohmic contacts; semiconductor device models; substrates; surface electron states; FET side-gating; GaAs substrates; III-V semiconductors; LSI/VLSI circuits; anode edge electric field; avalanche initiation; electroluminescence; filled surface electron states; model; monolithic IC; ohmic electrode edges; surface electrical breakdown; surface passivated semiinsulating type; white-light emission;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19840389
Filename
4248859
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