DocumentCode
993023
Title
1.5 W 11-17 GHz GaAs MESFET power amplifier utilising lumped-element matching techniques
Author
Klatskin, J.B.
Author_Institution
RCA Laboratories, Microwave Technology Center, David Sarnoff Research Center, Princeton, USA
Volume
20
Issue
13
fYear
1984
Firstpage
564
Lastpage
565
Abstract
The development of GaAs MESFET wideband power amplifiers requires the use of small size components and novel device packaging technology. We recently fabricated amplifier modules capable of 24.5 dBm output covering the 8.0-17 GHz band. The circuit utilised the lumped-element format. The modules were than power combined into a 31.8 dBm power amplifier.
Keywords
III-V semiconductors; Schottky gate field effect transistors; field effect transistor circuits; gallium arsenide; impedance matching; microwave amplifiers; power amplifiers; solid-state microwave circuits; wideband amplifiers; 11 to 17 GHz; 8.0 to 17 GHz band; GaAs; III-V semiconductors; MESFET power amplifier; SHF; lumped-element matching techniques; packaging technology; power combining; solid-state microwave circuits; wideband design;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19840391
Filename
4248861
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