Title :
1.5 W 11-17 GHz GaAs MESFET power amplifier utilising lumped-element matching techniques
Author_Institution :
RCA Laboratories, Microwave Technology Center, David Sarnoff Research Center, Princeton, USA
Abstract :
The development of GaAs MESFET wideband power amplifiers requires the use of small size components and novel device packaging technology. We recently fabricated amplifier modules capable of 24.5 dBm output covering the 8.0-17 GHz band. The circuit utilised the lumped-element format. The modules were than power combined into a 31.8 dBm power amplifier.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; field effect transistor circuits; gallium arsenide; impedance matching; microwave amplifiers; power amplifiers; solid-state microwave circuits; wideband amplifiers; 11 to 17 GHz; 8.0 to 17 GHz band; GaAs; III-V semiconductors; MESFET power amplifier; SHF; lumped-element matching techniques; packaging technology; power combining; solid-state microwave circuits; wideband design;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840391
