Improved characteristics of formal-passivated pseudomorphic high electron mobility transistor

Author

Lai, P.-H. ; Fu, S.-I. ; Tsai, Y.Y. ; Hung, C.W. ; Chen, T.P. ; Liu, W.C.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Tainan

Volume

43

Issue

1

fYear

2007

Firstpage

54

Lastpage

55

Abstract

Temperature-dependent characteristics of a formal-passivated pseudomorphic high electron mobility transistor (PHEMT) are studied and demonstrated. Experimentally, for the PHEMT´s operation, significant improvements of f_T, f_max, g_m and I_DS operating regime are found after formal passivation. In addition, remarkably lower temperature variation coefficients on V_on (-1.33 mV/K), BV_GD (-65.6 mV/K), Phi_B (-0.321 meV/K) and n (3.88times10^-4/K) are observed as temperature is increased from 300 to 480 K. Under an accelerated stress test, this formal-passivated device also shows improved reliability performance

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; life testing; passivation; semiconductor device reliability; semiconductor device testing; 300 to 480 K; AlGaAs-InGaAs-GaAs; PHEMT; accelerated stress test; device reliability; formal passivation; pseudomorphic high electron mobility transistor; stress test; temperature-dependent characteristics;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

Filename

4068492