Title :
Spectroscopy charge amplifier for detectors with integrated front-end FET
Author :
Bertuccio, G. ; Fasoli, L. ; Fiorini, C. ; Sampietro, M.
Author_Institution :
Dipartimento di Elettronica e Inf., Politecnico di Milano, Italy
fDate :
8/1/1995 12:00:00 AM
Abstract :
A charge amplifier, especially designed for FET integrated on silicon radiation detectors, is presented. The circuit is based on the forward biased FET amplifier configuration, which does not require the feedback resistor nor additional devices for resetting. The severe constraints on the preamplifier design, imposed by the low transconductance of small size integrated FET´s, are analyzed as far as loop-gain, bandwidth, and noise are concerned. A circuit topology which satisfies all the requirements even at relatively fast shaping time (1 μs) is proposed and experimentally tested
Keywords :
amplifiers; detector circuits; field effect transistors; nuclear electronics; silicon radiation detectors; Si radiation detectors; bandwidth; circuit topology; feedback resistor; forward biased FET amplifier configuration; integrated front-end FET; loop-gain; noise; preamplifier design; shaping time; small size integrated FET; spectroscopy charge amplifier; transconductance; Bandwidth; Circuit testing; FETs; Feedback circuits; Noise shaping; Preamplifiers; Resistors; Silicon radiation detectors; Spectroscopy; Transconductance;
Journal_Title :
Nuclear Science, IEEE Transactions on
