DocumentCode :
993101
Title :
Streamer model for ionization growth in a photoconductive power switch
Author :
Hudgins, Jerry L. ; Bailey, Daniel W. ; Dougal, Roger A. ; Venkatesan, V.
Author_Institution :
Dept. of Electr. & Comput. Eng., South Carolina Univ., Columbia, SC, USA
Volume :
10
Issue :
5
fYear :
1995
fDate :
9/1/1995 12:00:00 AM
Firstpage :
615
Lastpage :
620
Abstract :
The ionization process in a high gain photoconductive GaAs power switch is explored computationally, based on a streamer model. The streamer velocity was found to increase with increasing electric field, decreasing temperature, or increasing background ionization density. The electric field dependence of streamer velocity is consistent with experimental observations, lending support for the model´s predictions about the temperature and background ionization density dependencies. The large electric field associated with the highly charged streamer tip allows virtual propagation of the ionization column at speeds above 10 8 cm/s, well in excess of the carrier saturated drift velocity
Keywords :
III-V semiconductors; discharges (electric); electric fields; gallium arsenide; ionisation; photoconducting devices; photoconducting switches; power semiconductor switches; semiconductor device models; GaAs; background ionization density increase; electric field increase; high gain; highly charged streamer tip; ionization growth; ionization process; photoconductive GaAs power switch; streamer model; streamer velocity; temperature decrease; Electron mobility; Electron optics; Gallium arsenide; Ionization; Optical saturation; Phonons; Photoconducting materials; Photoconductivity; Switches; Temperature;
fLanguage :
English
Journal_Title :
Power Electronics, IEEE Transactions on
Publisher :
ieee
ISSN :
0885-8993
Type :
jour
DOI :
10.1109/63.406850
Filename :
406850
Link To Document :
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