Title :
Low-threshold and high temperature single-longitudinal-mode operation of 1.55 μm-band DFB-DC-PBH LDs
Author :
Kitamura, M. ; Yamaguchi, M. ; Murata, S. ; Mito, I. ; Kobayashi, K.
Author_Institution :
NEC Corporation, Opto-Electronics Research Laboratories, Kawasaki, Japan
Abstract :
1.55 μm-band distributed-feedback laser diodes with double-channel planar buried heterostructure (DFB-DC-PBH LDs) have been developed. As well as low threshold current, 19 mA at room temperature, stable CW single-longitudinal-mode operation up to the high power level of 23 mW and the high temperature of 108°C has been obtained.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; laser modes; optical communication equipment; optical waveguides; semiconductor junction lasers; 1.55 micron band; 108°C; DFB lasers; III-V semiconductors; InP/InGaAsP; PBH type; distributed-feedback laser diodes; double- channel planar buried heterostructure; high temperature operation; low threshold current; optical communication equipment; optical waveguides; semiconductor lasers; single-longitudinal-mode operation; stable CW operation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840410
