• DocumentCode
    993221
  • Title

    Preparation and properties of Nb Josephson junctions with thin Al layers

  • Author

    Gurvitch, M. ; Washington, M.A. ; Huggins, H.A. ; Rowel, J.M.

  • Author_Institution
    Bell Laboratories, Murray Hill, NJ
  • Volume
    19
  • Issue
    3
  • fYear
    1983
  • fDate
    5/1/1983 12:00:00 AM
  • Firstpage
    791
  • Lastpage
    794
  • Abstract
    Josephson tunnel junctions of the types Nb/Al-oxide-Nb and Nb/Al-oxide-Al/Nb, where Al represents thin (∼50Å) films of Al, were prepared by D.C. magnetron sputtering. The tunnel barrier was formed by in-situ thermal oxidation. Individual junctions were defined using photolithography coupled with the plasma etching technique. Junctions with critical current density up to 1300 A/cm2and Vm= icR(2mV) between 15mV and 47mV at 4.2K were obtained.
  • Keywords
    Josephson devices; Argon; Gases; Grain size; Impurities; Josephson junctions; Niobium; Resists; Sputtering; Substrates; Temperature;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.1983.1062296
  • Filename
    1062296
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=993221