DocumentCode :
993221
Title :
Preparation and properties of Nb Josephson junctions with thin Al layers
Author :
Gurvitch, M. ; Washington, M.A. ; Huggins, H.A. ; Rowel, J.M.
Author_Institution :
Bell Laboratories, Murray Hill, NJ
Volume :
19
Issue :
3
fYear :
1983
fDate :
5/1/1983 12:00:00 AM
Firstpage :
791
Lastpage :
794
Abstract :
Josephson tunnel junctions of the types Nb/Al-oxide-Nb and Nb/Al-oxide-Al/Nb, where Al represents thin (∼50Å) films of Al, were prepared by D.C. magnetron sputtering. The tunnel barrier was formed by in-situ thermal oxidation. Individual junctions were defined using photolithography coupled with the plasma etching technique. Junctions with critical current density up to 1300 A/cm2and Vm= icR(2mV) between 15mV and 47mV at 4.2K were obtained.
Keywords :
Josephson devices; Argon; Gases; Grain size; Impurities; Josephson junctions; Niobium; Resists; Sputtering; Substrates; Temperature;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.1983.1062296
Filename :
1062296
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=993221
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