Title :
Negative X-ray resist produced by proton bombardment
Author :
Gecim, H.S. ; Howe, R. ; Mcgowan, J.W. ; Reid, I.
Author_Institution :
University of Western Ontario, Centre for Interdisciplinary Studies in Chemical Physics Department of Physics, London, Canada
Abstract :
Polymethylmetacrylate (PMMA) films of 580 nm have been irradiated by X-rays through a copper mask. Subsequent proton bombardment of the PMMA films (masked and unmasked regions) changes them, at doses ¿2×1013 ions/cm2, from a positive to a negative resist.
Keywords :
ion beam effects; large scale integration; masks; photoresists; polymer films; proton effects; Cu mask; PMMA films; VLSI; X-ray resist; ion bombardment; negative resist; photolithography; polymethylmethacrylate; proton bombardment; sensitising; submicron linewidths; wavelength 5 nm;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840412
